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  • drexnx - Thursday, February 27, 2020 - link

    FD-SOI lives!

    and apparently so does GloFo R&D!
  • psychobriggsy - Thursday, February 27, 2020 - link

    I like that one of the spider diagram benefits of 22nm MRAM versus 28nm eFlash is 22nm support (4 points for MRAM, 0 for eFlash).

    Also they couldn't bear to give MRAM 2 points for maturity, so it's the only score with a .5 for no appreciable reason.

    But it does look like a good technology, especially going forward to smaller nodes, where eFlash will be very difficult to scale to.
  • boeush - Thursday, February 27, 2020 - link

    Hard to judge just how quantitative - rather than qualitative - those scores really are. That said, they also have it at 3.5 on "Endurance".

    I can see 22 nm support as a defensible benefit if it enables the rest of the chip to also be on 22 nm (as opposed to 28 nm)...

    Also they never gave a 0 score to anything; fit some reason their minimum is 1 even though 0 is available on the diagram...

    What do you expect. It's marketing, not engineering.
  • Fataliity - Thursday, February 27, 2020 - link

    Is their 14 FDX out yet? The power consumption and cost advantages would make a good use for an IO die in my opinion.
  • spaceship9876 - Thursday, February 27, 2020 - link

    I think you mean 12FDX.
  • Dragonstongue - Thursday, February 27, 2020 - link

    I want an SSD made with this stuff, for reasonable cost ^.^

    I can see how this would be a massive boon vs the "bust" IMHO that QDC/QLC whatever you want to call it IS...i.e much less P/E cycles much higher chance of failure, not really massive jump (as promised sic.) for pretty much same price as "tried and true" TLC or MLC designs.

    this probably will not likely be used as such, but still, overheat or "too cold" not an issue, want to put your drive in "cold storage" for an extended period of time, not a problem, likely backed by 5-7 years warranty, not a problem.

    would be kick A** (^.^)
  • boozed - Monday, March 16, 2020 - link

    "MRAM does not involve electric charges or current flows"
    So how does it read and write?

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